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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3 package *High breakdown voltage APPLICATIONS *High voltage power switching character display horizontal deflection output PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC3026 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1700 800 6 5 6 50 150 -45~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICES PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current CONDITIONS IC=10mA ;RBE= IE=10mA; IC=0 IC=5A; IB=1.25A IC=5A; IB=1.25A VCE=1700V; RBE= MIN 800 6 TYP. 2SC3026 MAX UNIT V V 2.0 1.5 0.5 V V mA Switching times ts tf Storage time IC=5A; IB1=1A;IB2=-2.5A Fall time 0.5 s 4.0 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3026 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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